![]() MC78M08ABDT : 500mA, 5V,☒% Tolerance, Voltage Regulator, ta = -40☌ to +125☌, Package: Dpak, Pins=3 MC14520BCP : Dual BCD up Counter, Package: Pdip, Pins=16 MC100EP16VBDTR2 : Amplifier 3.3V / 5V Ecl Differential Receiver/driver With High And Low Gain, Package: Soic, Pins=8 MJD112G Complementary Darlington Power TransistorsīDX34CG Darlington Complementary Silicon Power Transistors MC78M05ABDTG 500 mA Positive Voltage Regulators MJF15030G Complementary Silicon Power Transistors 8 Amperes 150 Volts, 36 WattsĢN6509G Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 Amperes RMS 50 thru 800 Volts NCP563SQ15T1G 80 mA CMOS Low Iq Low-dropout Voltage RegulatorġSMB5940BT3G 3 Watt Plastic Surface Mount Zener Voltage Regulators MURB1660CTG Ultrafast Rectifier 16 Amperes, 600 VoltsīDW42_05 Darlington Complementary Silicon Power Transistors MJD42CRLG Complementary Power Transistors SMF48AG Zener Transient Voltage Suppressor Sod−123 Flat Lead Package NB100LVEP17DTG 2.5 V/3.3 V Any Level Positive Input to −2.5 V/−3.3 V Lvnecl Output TranslatorĢN3906G General Purpose Transistors PNP Silicon NTHD4P02F Power Mosfet and Schottky Diode NCP370MUAITXG Positive and Negative Overvoltage Protection with Internal Low RON N-mosfets and Reverse Charge Control Pin MPSW45ARLRAG One Watt Darlington Transistors NPN Silicon Some Part number from the same manufacture ON Semiconductor fT Ccb MHz pF hFE 15,000 4,000 VCE(sat) VBE(sat) VBE(on) Vdc MPSW45 MPSW45A IEBO V(BR)CES MPSW45 MPSW45A V(BR)CBO MPSW45 MPSW45A V(BR)EBO ICBO nAdc Vdc nAdc Vdc Symbol Min Max Unit Pulse Test: Pulse Width v 300 ms Duty Cycle 2.0%. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.Ĭharacteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector -Base Breakdown Voltage (IC = 100 mAdc, = 0) Emitter -Base Breakdown Voltage (IE = 10 mAdc, = 0) Collector Cutoff Current (VCB = 30 Vdc, = 0) (VCB = 40 Vdc, = 0) Emitter Cutoff Current (VEB = 10 Vdc, 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 200 mAdc, VCE = 5.0 Vdc) (IC = 500 mAdc, VCE = 5.0 Vdc) (IC = 1.0 Adc, VCE = 5.0 Vdc) Collector -Emitter Saturation Voltage (IC = 1.0 Adc, = 2.0 mAdc) Base- Emitter Saturation Voltage (IC = 1.0 Adc, = 2.0 mAdc) Base -Emitter On Voltage (IC = 1.0 Adc, VCE = 5.0 Vdc) SMALL- SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 200 mAdc, VCE = 5.0 Vdc, = 100 MHz) Collector-Base Capacitance (VCB = 10 Vdc, = 1.0 MHz) 1. Preferred devices are recommended choices for future use and best overall value. See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. MPSW45x = Device Code = 45A Devices A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ![]() If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ![]() Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. Maximum ratings are those values beyond which device damage can occur. Rating Collector -Emitter Voltage MPSW45A Collector -Base Voltage MPSW45A Emitter -Base Voltage Collector Current - Continuous Total Device Dissipation = 25☌ Derate above 25☌ Total Device Dissipation = 25☌ Derate above 25☌ Operating and Storage Junction Temperature RangeĬharacteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Symbol RqJA RqJC Max 125 50 Unit ☌/W MPS W45x AYWW G COLLECTOR 3 BASE 2 Symbol MPSW45 VCES VCBO VEBO IC PD TJ, Tstg Value to +150 Unit Vdc Adc W mW/☌ W mW/☌ TO-92 (TO-226) CASE 29-10 STYLE 1 EMITTER 1 ![]()
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